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Zhelin (Jason) Yu
Graduate Student
University of Denver
Denver, Colorado
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EPR Techniques:
cw EPR, EPR oxymetry, EPR theory and simulation, imaging, rapid-scan EPR

Research Areas:
defect centers, diagnostics / imaging, instrumentation / methods development, nitroxides, organic radicals, transition metals

I am a graduate student in University of Denver. My research includes rapid scan and digital EPR developments in solid state nitroxides, spin-labeled proteins, irradiated tooth enamel and fingernails.

Xiaojun Zhang
Postdoctoral Scholar
Los Angeles, California
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EPR Techniques:
cw EPR, DEER / PELDOR, ENDOR, EPR theory and simulation, pulse EPR

Research Areas:
nucleic acids, single-molecule magnets

My research focuses on using EPR to study nucleic acids structure and dynamics and their interaction with proteins. Joining SharedEPR network is one of the best way to learn the cutting-edge EPR techniques, get to be informed of the major advancements in EPR field, as well as the problems we are facing. I will gain invaluable experiences on how to plan my career, as well as build connections for possible future collaborations.

Yunzhi Zhang
Graduate Student
Department of Chemistry
Clemson University
Clemson, SC
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EPR Techniques:

Research Areas:
organic radicals

My research project now is interested in DNP technology, especially dissolution DNP. we try to use nano-scale beads which involve radicals inside to work for DNP, when combine with radicals such as BDPA, nanobeads can be very helpful to polarize materials without glassing solvent. I have the passion to continue my research project, which means I need more knowledge outside my university. So participate in the SharedEPR can really help me to my future research work.

Lihuang Zhu
Graduate Student
Physics and Astronomy
Dartmouth College
Hanover, NH
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EPR Techniques:

Research Areas:
defect centers, inorganic semiconductors

1-Graduate student
2-EDMR hardware for zero-field, low-field (2-4GHz) and high-field (94GHz)
3-Various 2-4GHz resonator designs
3-Donor electrons in phosphorus doped silicon sample
4-Vacancy defects in Si:C